Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy

n-type 6H silicon carbide has been studied using positron lifetime spectros copy with isochronal annealing temperatures of 400, 650, 900, 1200, and 140 0 degrees C. in the as-grown sample, we have identified the Vsi vacancy, th e VCVSi divacancy, and probably the V-C vacancy. The silicon vacancy and th e carbon vacancy were found to anneal out in the temperature range 400-650 degrees C. The VCVSi divacancy was found to persist at an annealing tempera ture of 1400 degrees C.