Zeeman effect of electronic Raman lines of accepters in elemental semiconductors: Boron in blue diamond

The Zeeman effect of the electronic Raman transition from 1s(p(3/2)):Gamma( 8) to the 1s(p(1/2)):Gamma(7) spin-orbit partner (Delta') of boron accepter s in diamond is studied with magnetic field B along [001], [111], or [110]. As many as eight Zeeman components of Delta' and, in addition, four Raman lines ascribed to transitions between fhe Zeeman sublevels of Gamma(8) [Ram an-electron-paramagnetic-resonance (Raman-EPR) transitions] are observed wi th the polarizations expected from the polarizability tensors that characte rize them. These tensors are formulated in terms of gamma(1), gamma(2), and gamma(3) the Luttinger parameters characterizing the p(3/2) and p(1/2) val ence band maxima. The selection rules and relative intensities of the Zeema n components and of the Raman-EPR lines, observed in diverse polarization c onfigurations and scattering geometries, have led to determination of (1) t he assignments of magnetic quantum numbers; (2) the level ordering of the Z eeman sublevels, or, equivalently, the magnitudes and signs of g(1) and g(2 ), the orbital and spin g factors of the acceptor-bound hole; (3) the extre me mass anisotropy as reflected in the ratio (gamma(2)/gamma(3))= 0.08 +/- 0.01 Magnetic-field-induced mixing of zero field states, time reversal symm etry, and the diamagnetic contributions that characterize the different sub levels: are fully taken into account in the interpretation of the experimen tal results. These include the striking mutual exclusion of the Stokes spec trum from its anti-Stokes counterpart in specific polarization configuratio ns.