Effect of interfacial roughness on the phase of quantum well states in Cu/Co(001) and Cu/Ni(001) systems

Citation
Hj. Choi et al., Effect of interfacial roughness on the phase of quantum well states in Cu/Co(001) and Cu/Ni(001) systems, PHYS REV B, 62(10), 2000, pp. 6561-6564
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
10
Year of publication
2000
Pages
6561 - 6564
Database
ISI
SICI code
0163-1829(20000901)62:10<6561:EOIROT>2.0.ZU;2-Z
Abstract
It is known that the quantum well (QW) states in magnetic layered structure s can be well described by a phase accumulation model (PAM) in which the ph ase is calculated by assuming a perfectly sharp interface. In order to veri fy the validity of this assumption, we studied the effect of interfacial mi xing on the phase of QW states in Co/Cu/Co(001) and Co/Cu/Ni(001) systems. By controlling the annealing time, we progressively increased the interfaci al mixing on these films. While the interlayer oscillatory coupling changes upon annealing, the coupling peak positions remain unchanged. This result suggests that the phase of the QW states have little dependence on the inte rfacial mixing.