The interaction between the telegraph noise and background voltage fluctuat
ions in the current induced dissipative state of high-T-c BiSrCaCuO thin fi
lms has been investigated. Experimental time records of the voltage drop ac
ross current biased thin film strips show markedly different background noi
se traces in the up and down telegraph states. Detailed analysis demonstrat
es that fluctuations around the telegraph voltage levels are due to a uniqu
e background noise process. The apparent quiet and noisy voltage stares are
due only to differences in the effective frequency bandwidth at which back
ground noise is seen at distinct telegraph levels. Changes of the backgroun
d noise variance ratio with changing bias current follow changes of the sta
tistical average lifetimes of the random telegraph process.