The development of optical gain in chemically synthesized semiconductor nan
oparticles (nanocrystal quantum dots) has been intensely studied as the fir
st step toward nanocrystal quantum dot Lasers, We examined the competing dy
namical processes involved in optical amplification and Lasing in nanocryst
al quantum dots and found that, despite a highly efficient intrinsic nonrad
iative Auger recombination, Large optical gain can be developed at the wave
length of the emitting transition for close-packed solids of these dots. Na
rrowband stimulated emission with a pronounced gain threshold at wavelength
s tunable with the size of the nanocrystal was observed, as expected from q
uantum confinement effects. These results unambiguously demonstrate the fea
sibility of nanocrystal quantum dot lasers.