Detailed attention to the design of resist processing nozzle rinsing action
and improved airflow around the developer catch-cup chamber, combined with
physical process-parameter optimization, has achieved a significant reduct
ion in defects during resist processing and wider process latitude. The ove
rall effects include yield and throughput improvements using deep-UV resist
s, which translate into enhanced cost of ownership, and the potential of mi
nimizing chemical and deionized water consumption to meet stringent environ
mental regulations. Further, we believe that the results presented here are
applicable to smaller geometries and to 300mm wafers.