Donor binding energies in GaAs quantum wells considering the band nonparabolicity effects and the wavefunction elongation

The donor binding energies in finite GaAs/GaxAl1-As-x quantum wells have be en calculated by considering the confinement of electrons, which increases as the well width increases. The variational solutions have been improved b y using a two-parameter trial wavefunction, and by including the conduction band nonparabolicity. It is shown that the method used gives results in ag reement with those obtained in the experiments on the effective mass and th e donor binding energy, both of which are strongly dependent on the well wi dth. (C) 2000 Academic Press.