Three LNAs at 2 GHz frequency range have been implemented in a SiGe Bipolar
process targeted for a universal mobile telecommunications system. The LNA
s are operating in two gain modes and they include a power-down mode. Both
on-wafer and packaged LNAs were measured. Noise figure below 2 dB with IIP3
of 1 dBm and gain exceeding 15 dB has been achieved. LNAs work from a 2.7-
5.5 V power supply. A figure of merit method is used to compare this work t
o other published LNAs.