Enhanced wavelength tuning of an InGaAsP-InP laser with a thermal-strain-magnifying trench

Citation
Da. Cohen et al., Enhanced wavelength tuning of an InGaAsP-InP laser with a thermal-strain-magnifying trench, APPL PHYS L, 77(17), 2000, pp. 2629-2631
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
17
Year of publication
2000
Pages
2629 - 2631
Database
ISI
SICI code
0003-6951(20001023)77:17<2629:EWTOAI>2.0.ZU;2-F
Abstract
We have used temperature-dependent strain from differential thermal expansi on to increase the temperature tuning rate, d lambda/dT, of the modal wavel ength of an InP-based laser. The effectiveness of the strain may be further enhanced with a deep trench etch beneath the laser waveguide. We have obta ined a 50% increase in the tuning rate, without degradation of the threshol d current, and a maximum increase of 86%. (C) 2000 American Institute of Ph ysics. [S0003-6951(00)00243-6].