Defect generation in ultrathin silicon dioxide films produced by anode hole injection

Authors
Citation
Dj. Dimaria, Defect generation in ultrathin silicon dioxide films produced by anode hole injection, APPL PHYS L, 77(17), 2000, pp. 2716-2718
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
17
Year of publication
2000
Pages
2716 - 2718
Database
ISI
SICI code
0003-6951(20001023)77:17<2716:DGIUSD>2.0.ZU;2-M
Abstract
A direct demonstration of defect generation in ultrathin silicon dioxide fi lms due to the transport of holes through this layer is reported. These def ects are observed only when the hole current to the cathode of the device e xceeds the electron current to the anode. This condition is produced on p-c hannel field-effect transistors under negative gate-voltage-bias conditions with ultrathin gate oxide layers. These results are related to current rel iability models which use anode hole injection and the defects produced to explain destructive breakdown of the oxide layer. (C) 2000 American Institu te of Physics. [S0003-6951(00)04743-4].