A ferroelectric superlattice with an antiferroelectric interfacial coupling
is considered; the same model describes a bilayer with antiferroelectric c
oupling. By mapping minimum points in the Landau free energy expression and
plotting them against the applied electric field, a triple hysteresis loop
pattern is obtained. The loop patterns vary between typically ferroelectri
c and typically antiferroelectric depending on the layer thicknesses and th
e magnitude of the interfacial-coupling constant. This work suggests the po
ssibility of designing multilayer elements for computer memories with four
or more different storage states. (C) 2000 American Institute of Physics. [
S0003-6951(00)03843-2].