Jc. Harmand et al., Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN, APPL PHYS L, 77(16), 2000, pp. 2482-2484
The incorporation of nitrogen in the low percentage range is investigated i
n a different III-V compound matrix. The materials are grown by molecular-b
eam epitaxy with a nitrogen radio-frequency plasma source. For equivalent g
rowth conditions, the same rate of N incorporation is found for GaAsN and G
aInAsN. However, this N incorporation rate is significantly enhanced in the
GaAsSbN alloy. These observations support a discussion on the reactive nit
rogen species. (C) 2000 American Institute of Physics. [S0003- 6951(00)0024
2-4].