Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN

Authors
Harmand, JC Ungaro, G Largeau, L Le Roux, G
Citation
Jc. Harmand et al., Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN, APPL PHYS L, 77(16), 2000, pp. 2482-2484
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
16
Year of publication
2000
Pages
2482 - 2484
Database
ISI
SICI code
0003-6951(20001016)77:16<2482:CONIIM>2.0.ZU;2-V
Abstract
The incorporation of nitrogen in the low percentage range is investigated i n a different III-V compound matrix. The materials are grown by molecular-b eam epitaxy with a nitrogen radio-frequency plasma source. For equivalent g rowth conditions, the same rate of N incorporation is found for GaAsN and G aInAsN. However, this N incorporation rate is significantly enhanced in the GaAsSbN alloy. These observations support a discussion on the reactive nit rogen species. (C) 2000 American Institute of Physics. [S0003- 6951(00)0024 2-4].