Structural analysis of InxGa1-xN single quantum wells by coaxial-impact collision ion scattering spectroscopy

Authors
Sumiya, M Nakamura, S Chichibu, SF Mizuno, K Furusawa, M Yoshimoto, M
Citation
M. Sumiya et al., Structural analysis of InxGa1-xN single quantum wells by coaxial-impact collision ion scattering spectroscopy, APPL PHYS L, 77(16), 2000, pp. 2512-2514
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
16
Year of publication
2000
Pages
2512 - 2514
Database
ISI
SICI code
0003-6951(20001016)77:16<2512:SAOISQ>2.0.ZU;2-H
Abstract
The structures of InxGa1-xN single quantum wells (SQWs) on 3-mu m-thick GaN layer for the ultraviolet, blue, and green light-emitting devices were inv estigated by coaxial-impact collision ion scattering spectroscopy (CAICISS) . The possibility that CAICISS could analyze structural fluctuation of the ternary system like InxGa1-xN was demonstrated. It was found that In incorp orated into InGaN SQWs occupied the substitutional site of Ga atom having G a-face (+c) polarity. (C) 2000 American Institute of Physics. [S0003- 6951( 00)03442-2].