Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures

Authors
Chanana, RK McDonald, K Di Ventra, M Pantelides, ST Feldman, LC Chung, GY Tin, CC Williams, JR Weller, RA
Citation
Rk. Chanana et al., Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures, APPL PHYS L, 77(16), 2000, pp. 2560-2562
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
16
Year of publication
2000
Pages
2560 - 2562
Database
ISI
SICI code
0003-6951(20001016)77:16<2560:FHTIPS>2.0.ZU;2-P
Abstract
We report the confirmed occurrence of Fowler-Nordheim hole tunneling in p-4 H-SiC metal-oxide-semiconductor capacitor structures. The effective mass fo r holes in the oxide is found to be in the range of 0.35m-0.52m, where m is the free electron mass. (C) 2000 American Institute of Physics. [S0003-695 1(00)00342-9].