In situ HREM irradiation study of an intrinsic point defects clustering inFZ-Si

Various extended defects produced by in situ electron irradiation in a high resolution electron microscope (JEOL 4000EX) at room temperature on {113} and {111} habit planes are reviewed on the base of the results recently obt ained. It was observed that both interstitials and vacancies tend to aggreg ate in the shape of < 110 >-oriented chain-like defects on {113}, in additi on to well-known rodlike defect of interstitial type. These defects are cha racterized by a different magnitude and opposite type of lattice relaxation introduced in surrounding. < 110 >-oriented interstitial chains are also f ormed by agglomeration of interstitials to the core of vacancy or interstit ial Frank partial dislocations to provide a relaxation of the strongly defo rmed crystal areas.