Heteroepitaxy of large-misfit systems: Role of coincidence lattice

We present a detailed study about the epitaxial growth of Various modem mat erials systems with large lattice misfit to GaAs substrates. The epitaxial alignment during the initial stage of growth and the misfit accommodation p rocess are determined by the particular interface structures which we have investigated by high-resolution transmission electron microscopy. The resul ts are explained with an extended coincidence lattice model and its general applicability to heteroepitaxial growth of large-misfit systems is discuss ed.