{110} and {111} ordering in MOVPE-grown (Ga,In)P on (001) GaAs substrates at low temperature

The microstructure of (Ga,In)P layers grown by metal organic vapour phase e pitaxy (MOVPE) at 580 degrees C was characterized by transmission electron microscopy (TEM), especially by electron diffraction (TED). In lattice-matc hed (Ga,In)P layers grown on exactly oriented (001) GaAs substrates or low misoriented ones additional intensity maxima occur at about 1/2 1/2 0 inter preted as ordering parallel to {110}. The {110} ordering is present in both undoped and doped layers. The well-known {1 (1) over bar 1} ordering was d etected in layers grown on (001) substrates with larger misorientation (2 d egrees off to {111}B). For the various ordering types a model was developed on the basis of stacking of ordered (001) planes as a kind of polytypism.