The synthesis mechanism of complex oxide films formed in dense rf-plasma by reactive sputtering of stoichiometric targets

Authors
Mukhortov, VM Golovko, YI Tolmachev, GN Klevtzov, AN
Citation
Vm. Mukhortov et al., The synthesis mechanism of complex oxide films formed in dense rf-plasma by reactive sputtering of stoichiometric targets, FERROELECTR, 247(1-3), 2000, pp. 75-83
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
FERROELECTRICS
ISSN journal
00150193 → ACNP
Volume
247
Issue
1-3
Year of publication
2000
Pages
75 - 83
Database
ISI
SICI code
0015-0193(2000)247:1-3<75:TSMOCO>2.0.ZU;2-N
Abstract
The paper presents new experimental data on the synthesis and crystallizati on of complex oxide films produced by rf sputtering of ceramic targets. The deposition system has threshold states, the transition through which sets off a qualitative modification of its properties. The main feature of this modification is the appearance of a new structured system in plasma.