Av. Shil'Nikov et al., Effective conductivity of DTGS and TGS single crystals under ultra weak fields of low and ultralow frequencies, FERROELECTR, 247(1-3), 2000, pp. 197-204
Comparative research has been carried out of dielectric properties (and wit
h their help of conductivity) of DTGS and TGS single crystals under ultra w
eak fields (E-o=0,2V.cm(-1)) of low (LF) and ultralow (ULF) frequencies (v=
10(4)-10(-1)Hz) in the range of temperatures from 20 degrees C to 120 degre
es C (including the phase transition (PT)). There are reasons to think that
the ULF conductivity of the DTGS single crystal in paraelectric phase is i
on-jumping conductivity caused, most likely, by jumping of deuterons whose
activation energy is similar to 0,93eV. The conductivity of TGS single crys
tals in paraelectric phase, is apparently due to several carriers that make
integrated contribution to the conductivity of a crystal on LF and ULF.