Effective conductivity of DTGS and TGS single crystals under ultra weak fields of low and ultralow frequencies

Citation
Av. Shil'Nikov et al., Effective conductivity of DTGS and TGS single crystals under ultra weak fields of low and ultralow frequencies, FERROELECTR, 247(1-3), 2000, pp. 197-204
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
FERROELECTRICS
ISSN journal
00150193 → ACNP
Volume
247
Issue
1-3
Year of publication
2000
Pages
197 - 204
Database
ISI
SICI code
0015-0193(2000)247:1-3<197:ECODAT>2.0.ZU;2-O
Abstract
Comparative research has been carried out of dielectric properties (and wit h their help of conductivity) of DTGS and TGS single crystals under ultra w eak fields (E-o=0,2V.cm(-1)) of low (LF) and ultralow (ULF) frequencies (v= 10(4)-10(-1)Hz) in the range of temperatures from 20 degrees C to 120 degre es C (including the phase transition (PT)). There are reasons to think that the ULF conductivity of the DTGS single crystal in paraelectric phase is i on-jumping conductivity caused, most likely, by jumping of deuterons whose activation energy is similar to 0,93eV. The conductivity of TGS single crys tals in paraelectric phase, is apparently due to several carriers that make integrated contribution to the conductivity of a crystal on LF and ULF.