Phase transformations occurring in initially amorphous Zn41Sb59 semiconduct
or at pressures to 10 GPa and temperatures to 350 degrees C were studied us
ing the measurement of electrical resistance, in situ energy dispersive X-r
ay diffraction and neutron diffraction on quenched high-pressure phases at
ambient pressure. The studied T-P region involves the regions of reversible
and irreversible crystallisation and phase transitions between the equilib
rium crystalline low-pressure and high-pressure phases.