The measurements of thermoelectric power S and resistance rho at high press
ure synthetic diamond anvils cell were performed for (PbS)(0.59)TiS2 and Ti
S2 crystals. The phase transition was found at P approximate to 2 GPa accom
panied by descend of rho and \S\ for (PbS)(0.59)TiS2 This transition is con
nected with structural change of PbS fragment from pseudocubic cell to orth
orombic one and as consequence, with change of the electron concentration i
n TiS2-layers. From the electronic structure calculations for TiS2, the sem
iconductor-metal transition occurs at pressure P greater than or equal to 4
GPa. Experimentally at this pressure range the decrease of rho (P) was obs
erved for (PbS)(0.59)TiS2 crystals.