Electrical properties of (PbS)(0.59)TiS2 crystals at high pressures up to 20 GPa

The measurements of thermoelectric power S and resistance rho at high press ure synthetic diamond anvils cell were performed for (PbS)(0.59)TiS2 and Ti S2 crystals. The phase transition was found at P approximate to 2 GPa accom panied by descend of rho and \S\ for (PbS)(0.59)TiS2 This transition is con nected with structural change of PbS fragment from pseudocubic cell to orth orombic one and as consequence, with change of the electron concentration i n TiS2-layers. From the electronic structure calculations for TiS2, the sem iconductor-metal transition occurs at pressure P greater than or equal to 4 GPa. Experimentally at this pressure range the decrease of rho (P) was obs erved for (PbS)(0.59)TiS2 crystals.