Low-threshold, continous-wave two-stack quantum-dot laser with reduced temperature sensitivity

Citation
Ob. Shchekin et al., Low-threshold, continous-wave two-stack quantum-dot laser with reduced temperature sensitivity, IEEE PHOTON, 12(9), 2000, pp. 1120-1122
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
9
Year of publication
2000
Pages
1120 - 1122
Database
ISI
SICI code
1041-1135(200009)12:9<1120:LCTQLW>2.0.ZU;2-I
Abstract
Data are presented on continuous wave operation of two-stack quantum dot la sers designed with reduced temperature sensitivity in their threshold. The InAs quantum dots are designed to have a wide energy spacing (similar to 10 2 meV) between the ground and first excited radiative transitions. Selectiv ely oxidized stripe lasers have continuous wave threshold currents as low a s 1.2 mA for 2 mu m wide stripes and minimum threshold current densities of 26 A/cm(2) for 13-mu-m nide stripes. Broad area lasers have continuous wav e threshold current densities as:low as 40 A/cm(2), even for p-up mounting. Ground state lasing is:obtained-up to the highest temperature measured of 326 K.