Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region

Self-assembled In0.5Ga0.5As quantum-dot lasers with different doping scheme s in the active region are investigated, Their lasing wavelength, character istic temperature, quantum efficiency, and internal loss are characterized and correlated with the size, uniformity, and density of the quantum dots a s revealed by atomic force microscopy, Continuous-wave operation of Be-dope d quantum-dot lasers has been achieved. Undoped In0.5Ga0.5As quantum-dot la sers with a characteristic temperature as high as 125K above room temperatu re have also been demonstrated.