Passively mode-locked diode-pumped surface-emitting semiconductor laser

Authors
Hoogland, S Dhanjal, S Tropper, AC Roberts, JS Haring, R Paschotta, R Morier-Genoud, F Keller, U
Citation
S. Hoogland et al., Passively mode-locked diode-pumped surface-emitting semiconductor laser, IEEE PHOTON, 12(9), 2000, pp. 1135-1137
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
9
Year of publication
2000
Pages
1135 - 1137
Database
ISI
SICI code
1041-1135(200009)12:9<1135:PMDSSL>2.0.ZU;2-C
Abstract
A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror, T he gain medium consists of a stack of 12 InGaAs/GaAs strained quantum wells , grown above a Bragg mirror structure, and pumped optically by a high-brig htness diode laser. The mode-locked laser emits pulses of 22-ps full-width at half maximum duration at 1030 nm, with a repetition rate variable around 4.4 GHz.