Packaged photonic probes for an on-wafer broad-band millimeter-wave network analyzer

We report the fabrication of integrated and packaged active photonic probes that enable on-wafer measurements of electrical scattering parameters with a bandwidth exceeding 300 GHz, The probes use a high-speed uni-traveling-c arrier photodiode (UTC-PD) to optically generate the electrical stimulus an d the electro-optic sampling (EOS) technique to measure the electrical sign als. The modules are packaged using micro-optic technology and exhibit exce llent optical characteristics. They are easy to use, enable reliable and re producible measurements, and should help to overcome the bandwidth-limitati on of present all-electronic similar systems.