A new BiCMOS increased full-swing converter for low-internal-voltage ULSI systems

In this brief, a new Bicomplementary metal-oxide-semiconductor (CMOS) incre ased full-swing inverter (IFSI) and a new BICMOS increased full-swing buffe r (IFSB) for Iom voltage/low power ULSI (ultralarge scale integration) syst ems are proposed. Based on the SPICE simulations, we demonstrate that these circuits can operate at low internal voltage (V-int) and have low input si gnal swing. With V-int > \V-t\ (assuming V-tn = -V-tp), the circuits work p roperly. When the capacitor load is larger than 0.6pf, the propagation dela ys and the delay power products of the proposed circuits for different inte rnal voltages are better than those of previous circuits [3] under the same circuit design parameters. Moreover, the proposed circuits achieve signifi cant improvement in speed and noise margin. The results in this brief can a void the trial and error step in the circuit sizing operation to reduce the power consumpt.