Epitaxial growth of Pt and oxide multilayers on MgO by laser ablation

Citation
M. Morcrette et al., Epitaxial growth of Pt and oxide multilayers on MgO by laser ablation, J APPL PHYS, 88(9), 2000, pp. 5100-5106
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
9
Year of publication
2000
Pages
5100 - 5106
Database
ISI
SICI code
0021-8979(20001101)88:9<5100:EGOPAO>2.0.ZU;2-S
Abstract
We have studied the epitaxial growth of Pt films on MgO substrates by laser ablation. Depending upon oxygen pressure during deposition, different Pt f ilm textures were observed. Pure (001) films are grown under oxygen (0.1 mb ar), while (111) films are formed under high vacuum (< 10(-6) mbar). By the complementary use of Rutherford backscattering spectrometry in channeling geometry and x-ray diffraction, the crystalline quality was found nearly pe rfect. Finally multilayered structures with LiCoO2 or LiMn2O4 layer on Pt f ilm on MgO substrates were epitaxially grown by laser ablation. Such oxide films could present interesting properties as insertion compounds in lithiu m batteries, and we demonstrate that LiMn2O4 could be used for the accurate determination of lithium concentration in solution. (C) 2000 American Inst itute of Physics. [S0021-8979(00)09717-6].