Influence of molecular hydrogen on Ge island nucleation on Si(001)

Citation
D. Dentel et al., Influence of molecular hydrogen on Ge island nucleation on Si(001), J APPL PHYS, 88(9), 2000, pp. 5113-5118
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
9
Year of publication
2000
Pages
5113 - 5118
Database
ISI
SICI code
0021-8979(20001101)88:9<5113:IOMHOG>2.0.ZU;2-U
Abstract
The influence of molecular hydrogen (H-2) on the structural and optical pro perties of self-assembled Ge dots grown on Si(001) has been studied using a tomic force microscopy and photoluminescence spectroscopy (PL). Without hyd rogen, a well known bimodal island size distribution occurs with small {105 } faceted pyramids, and larger multifaceted domes. In the presence of an ad ditional H-2 flow, we observe that a higher density of smaller pyramids and a lower density of domes occurs. Moreover, in the presence of hydrogen, PL investigations have revealed a thicker wetting layer thickness, probably d ue to a reduction of the surface diffusion length. (C) 2000 American Instit ute of Physics. [S0021-8979(00)07822-1].