The mechanism of photoluminescence (PL) in hydrogenated amorphous carbon (a
-C:H), and nitrogenated and hydrogenated amorphous carbon (a-C:H:N) thin fi
lms grown by radio frequency driven plasma enhanced chemical vapor depositi
on is still a subject of much debate. In this work, we investigate the PL s
ignal obtained from a-C:H and a-C:H:N films, paying particular attention to
the effect of nitrogen flow rate during growth, and postgrowth, ex situ an
nealing on the PL properties of the films. We also correlate the PL spectra
to the electronic structure of the films. The films had a low paramagnetic
defect density (10(17) cm(-3)). The PL spectra were obtained using the 488
nm (2.54 eV) line of an argon ion laser, as the excitation source. It was
observed that the nitrogenation of the films leads to the creation of new b
ands in the PL signal, which were correlated to the bond fraction of CN tri
ple bonds, as measured by infrared spectroscopy. (C) 2000 American Institut
e of Physics. [S0021-8979(00)01122-1].