PREPARATION AND PROPERTIES OF (ZNS)(3)(ZNSE)(42) ORDERED ALLOYS FABRICATED BY PLASMA-ENHANCED LOW-TEMPERATURE GROWTH TECHNIQUE

Gallium-doped ZnSe and ordered alloys, (ZnS)(3)(ZnSe)(42), were grown on a GaAs substrate. Low-temperature growth (T-g=200 degrees C) of ZnS e and ZnS films was performed by hydrogen radical-enhanced chemical va por deposition (HRCVD) using triethylgallium (TEGa) as the dopant sour ce. Atomic hydrogen generated by RF plasma is used to enhance the form ation of the depositing species. Two-dimensional ordered structures on the atomic scale were achieved by atomic layer epitaxy (ALE). In phot oluminescence (PL) measurements of doped ZnSe film, the emission inten sity attributed to the neutral donor-bound exciton increases with incr easing TEGa flow rates. Strong blue PL emission was observed for the d oped ZnS e film with optimized TEGa flow rate at room temperature. In X-ray diffraction (XRD) spectra of the ordered alloys, satellite peaks due to the layered structure were observed. A carrier concentration o f 3 x 10(16) cm(-3) and a Hall mobility of 154 cm(2)/Vs were obtained for the ordered alloy, (ZnS)(3)(ZnSe)(42), at room temperature.