STRUCTURE OF MICROCRYSTALLINE SILICON-CARBIDE FILMS PREPARED BY HYDROGEN-RADICAL-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN MAGNETIC-FIELD

Authors
YASUI K MURAMOTO M AKAHANE T
Citation
K. Yasui et al., STRUCTURE OF MICROCRYSTALLINE SILICON-CARBIDE FILMS PREPARED BY HYDROGEN-RADICAL-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN MAGNETIC-FIELD, JPN J A P 1, 33(7B), 1994, pp. 4395-4399
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
33
Issue
7B
Year of publication
1994
Pages
4395 - 4399
Database
ISI
SICI code
Abstract
Microcrystalline silicon carbide films were grown by hydrogen-radical- enhanced chemical vapor deposition in magnetic field. Tetramethylsilan e was used as source material. Hydrogen radicals were generated by mic rowave plasma in magnetic field. Microcrystalline films grew on the Si substrate by supplying hydrogen radicals at temperatures higher than 250 degrees C. The structure and the crystallinity of SiC films were i nvestigated by cross-section transmission electron microscopy, electro n probe microanalysis and X-ray photoelectron spectroscopy.