The effects of boron impurities on the atomic bonding and electronic structure of Ni3Al

Citation
Rp. Winarski et al., The effects of boron impurities on the atomic bonding and electronic structure of Ni3Al, J ELEC SPEC, 110(1-3), 2000, pp. 69-74
Citations number
19
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
ISSN journal
03682048 → ACNP
Volume
110
Issue
1-3
Year of publication
2000
Pages
69 - 74
Database
ISI
SICI code
0368-2048(200010)110:1-3<69:TEOBIO>2.0.ZU;2-T
Abstract
Tunable synchrotron radiation was used to examine the boron K-valence emiss ion from boron doped Ni3Al (500 parts per million boron). When compared wit h electronic structure calculations these measurements yield information re garding the local bonding environment of the doped boron atoms within the a lloy structure. Our measurements appear to suggest that the boron atoms pre ferentially bond with the nickel atoms in this material. It seems that the boron atoms prefer to occupy octahedral interstitial sites surrounded by si x nickel atoms. This suggests that the enhancement in ductility observed in this alloy is due to the interplanar metallic bonding provided by the dope d boron atoms. (C) 2000 Elsevier Science B.V. All rights reserved.