CHEMICAL-KINETICS OF CHLORINE IN ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF SI

Electron cyclotron resonance (ECR) plasma, etching of Si in Cl-2 has b een studied from the viewpoint of plasma chemistry. Experiments were p erformed over a wide pressure range (0.2-10 mTorr), using a divergent magnetic-field ECR plasma reactor supplied with 2.45-GHz microwaves; a floating electrode or substrate holder was located similar to 30 cm d ownstream (B approximate to 150 G) of the 875-G ECR resonance region, and samples of polycrystalline Si were etched with no additional wafer biasing. Several diagnostics mere employed to characterize the plasma around the wafer position, including two-photon laser-induced fluores cence (LIF) for detection of Cl atoms and Fourier transform infrared ( FTIR) absorption spectroscopy for etch products or SiClx (x=1-4) molec ules. The Si etch rate behavior obtained is interpreted in terms of a modified adsorption-reaction-ion-stimulated desorption process model b ased on these diagnostics.