Ab initio calculations of the atomic and electronic structure of beta-silicon nitride

Citation
R. Belkada et al., Ab initio calculations of the atomic and electronic structure of beta-silicon nitride, J AM CERAM, 83(10), 2000, pp. 2449-2454
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
ISSN journal
00027820 → ACNP
Volume
83
Issue
10
Year of publication
2000
Pages
2449 - 2454
Database
ISI
SICI code
0002-7820(200010)83:10<2449:AICOTA>2.0.ZU;2-C
Abstract
The atomic and electronic structure of the beta-silicon nitride (beta-Si3N4 ) crystal have been determined using the ab initio pseudopotential method b ased on the density functional theory. We have obtained the stable lattice parameters and the stable positions of 14 atoms in the unit cell for the st ructure P6(3)/m for the first time. The electronic structure and the charge distribution indicate that the Si-N bond has both ionic and covalent chara cters. The band structure is in good agreement with the other first-princip les results and consistent with the experiments.