Variation of the orientation and the In-plane photocurrent properties of PbTe/CuPc heterostructures with the growth conditions

We know from the X-ray diffraction and atomic force microscope measurements that the alpha-CuPc layer confirm the dependences of the orientation and t he surface morphology on the growth rate. We prepared a PbTe a-axis-oriente d CuPc heterostructure because the a-axis-oriented CuPc layer has better co nductivity than the c-axis-oriented CuPc layer. The PbTe/CuPc heterostructu res were prepared from room temperature and 300 degrees C. In the in-plane current-voltage curves of the heterostructures for various substrate temper atures, the PbTe/CuPc heterostructure prepared at 300 degrees C exhibited m ore effectively photocurrent properties than did the heterostructure of any other temperature. It is suggested that PbTe thin films formed at 300 degr ees C have higher mobility than films formed at other temperatures.