Hot electron characterization in Si-MOSFETs

We have directly observed the energy distributions of hot electrons in Si M etal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). We used a Late ral Hot-Electron Transistor (LHET) employing two potential barriers tan emi tter barrier and a collector barrier) that divided the Si surface into thre e regions (emitter, base, and collector). For an emitter-base voltage of -1 .2 V, hot electrons with an excess energy of 1.3eV were detected at the col lector. The ratio of hot electrons to the injected electrons was 5.0%.