Scattering rates in a semiconductor heterostructure: the effects of intersubband transitions

We calculate electron scattering rates in a model for a semiconductor heter ostructure (SH) of nanometric dimensions. Electron interaction with polar o ptical phonons (POP) is considered by applying POP modes studied in previou s papers. The SH is modeled as a two interfaces slabs, one of them mechanic ally free and the other one an interface with a semi-infinite semiconductor . We focus on the effects of electron intersubband transitions, thus comple menting previous calculations where just intrasubband transitions were anal yzed. The electron wave functions are expressed through Airy functions. The contributions from intersubband transitions are estimated and compared wit h those of intrasubband transitions. (C) 2000 Elsevier Science B.V. All rig hts reserved.