Photocurrent and photoelectron yield spectroscopies of defect states in CVD diamond films

Citation
Mc. Rossi et al., Photocurrent and photoelectron yield spectroscopies of defect states in CVD diamond films, PHYS ST S-A, 181(1), 2000, pp. 29-35
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
181
Issue
1
Year of publication
2000
Pages
29 - 35
Database
ISI
SICI code
0031-8965(20000916)181:1<29:PAPYSO>2.0.ZU;2-7
Abstract
Photocurrent (PC) and photoelectron yield (PY) measurements have been used to investigate defect states in CVD diamond. Diamond films exhibit a non-ne gligible sub-band-gap photocurrent with a well defined energy onset related to the photoionization of acceptor-like defects located in the range 1.2-1 .3 eV. The PC energy onset is shifted to lower energy by chemical treatment in sulphochromic acid, which leads to the appearance of a photoionization band in the photocurrent spectrum. On the other hand, PY spectra closely fo llow a power law with an energy threshold in the range of 4.3-4.4 eV, which also shift to higher energies after the same chemical treatment. The resul ting defect level scheme consistent with both PC and PY results is discusse d.