Photocurrent (PC) and photoelectron yield (PY) measurements have been used
to investigate defect states in CVD diamond. Diamond films exhibit a non-ne
gligible sub-band-gap photocurrent with a well defined energy onset related
to the photoionization of acceptor-like defects located in the range 1.2-1
.3 eV. The PC energy onset is shifted to lower energy by chemical treatment
in sulphochromic acid, which leads to the appearance of a photoionization
band in the photocurrent spectrum. On the other hand, PY spectra closely fo
llow a power law with an energy threshold in the range of 4.3-4.4 eV, which
also shift to higher energies after the same chemical treatment. The resul
ting defect level scheme consistent with both PC and PY results is discusse
d.