Photoconductivity study of Li doped homoepitaxially grown CVD diamond

Citation
R. Zeisel et al., Photoconductivity study of Li doped homoepitaxially grown CVD diamond, PHYS ST S-A, 181(1), 2000, pp. 45-50
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
181
Issue
1
Year of publication
2000
Pages
45 - 50
Database
ISI
SICI code
0031-8965(20000916)181:1<45:PSOLDH>2.0.ZU;2-R
Abstract
Spectrally resolved photoconductivity (PC) experiments on homoepitaxially g rown, Li doped chemical vapour deposited diamond layers are presented. Om m easurements reveal two new photoconductive levels with absorption threshold s at photon energies of 0.9 eV and 1.5 eV. Due to metastable occupation, th e spectral dependence of the photoconductivity exhibits a pronounced peak. Via photoconductivity excitation experiments it could be shown that both ne w levels can be filled by photoionisation of the N donor. No correlation be tween Li content and spectral weight of photoexcitation at 1.7 eV could be observed.