Infrared and Raman spectroscopy of acceptors in diamond: Boron impurities

Citation
H. Kim et al., Infrared and Raman spectroscopy of acceptors in diamond: Boron impurities, PHYS ST S-A, 181(1), 2000, pp. 51-58
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
181
Issue
1
Year of publication
2000
Pages
51 - 58
Database
ISI
SICI code
0031-8965(20000916)181:1<51:IARSOA>2.0.ZU;2-1
Abstract
Substitutional boron accepters in nitrogen free, naturally occurring (type IIb) diamonds as well as in man-made diamonds exhibit characteristic Lyman transitions in the infrared, originating in the 1s(p(3/2)):Gamma(8) ground stale or in the thermally populated 1s(p(1/2)):Gamma(7) spin-orbit counterp art. In addition to the infrared Lyman lines having p-like final states, th e 1s(p(3/2)) --> 1s(p(1/2)) transition (Delta') appears as an electronic Ra man line; under the high resolution of a Fabry-Perot interferometer, the De lta' line exhibits a Jahn-Teller splitting. A comparison of the infrared an d Raman spectra of boron-doped natural and C-13 diamonds shows self-energy shifts in their corresponding features; The theoretical expression for the absolute cross section of the electronic Raman line at Delta' and that expe rimentally deduced from an intercomparison of intensities of Delta', Brillo uin components and the zone center optical phonon, recorded in the same exp eriment, yield the acceptor concentration. The Zeeman effect of Delta' exhi bits its predicted eight components and the four transitions within the Gam ma(8) multiplet. A theory formulated in terms of the pronounced hole mass a nisotropy explains the observed level ordering, polarizations of the Zeeman components, and the sign and magnitude of the g-factors of the hole. Besid es being of basic scientific interest, spectroscopy of accepters and donors is significant in characterizing diamond as a material for solid state ele ctronics.