Relative abundance of single and vacancy-bonded substitutional nitrogen inCVD diamond

Relations between the concentrations of neutral (N-0) and charged (N+) sing le-substitutional nitrogen and of nitrogen-vacancy (N-V) complexes in chemi cal vapour deposited diamond films of approximate to 0.2 mm thickness with nitrogen impurity concentration levels of 10 ppm are studied. For this purp ose the films were subjected to 8 MeV electron irradiation at room temperat ure and subsequent annealing at 800 degrees C. The samples were analysed by micro-photoluminescence; visible and IR absorption, and Electron Spin Reso nance techniques. It was found that the concentration of nitrogen in the (N -V) and N+ forms, in as-grown films, is less than 0.1% and 10% of the neutr al substitutional nitrogen N-0, respectively.