Carrier-carrier correlations in strain-induced quantum dots

We present results of a full configuration interaction (FCI) calculation fo r a strain-induced quantum dot. FCI is a numerically exact diagonalization method for finite many-particle systems. We solve the Schrodinger equation for low laying energy levels for systems consisting of up to four electron- hole pairs. Controlled approximations are made for larger systems. The resu lts allow us to study the reliability of the free particle and Hartree-Fock approximations. We find that correlations must be necessarily included in order to obtain reliable results. The energy structure obtained is consiste nt with photoluminescence measurements on strain-induced quantum dots induc ed by InP islands on a GaAs-InGaAs quantum well.