Temperature dependence of the polariton linewidth in a GaAs quantum well microcavity

Authors
Borri, P Jensen, JR Langbein, W Hvam, JM
Citation
P. Borri et al., Temperature dependence of the polariton linewidth in a GaAs quantum well microcavity, PHYS ST S-B, 221(1), 2000, pp. 143-146
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
221
Issue
1
Year of publication
2000
Pages
143 - 146
Database
ISI
SICI code
0370-1972(200009)221:1<143:TDOTPL>2.0.ZU;2-R
Abstract
The temperature dependent linewidths of the polariton resonances in a GaAs/ AlGaAs single quantum well microcavity are measured. Due to the dominant ho mogeneous broadening of the investigated resonances, a direct linewidth ana lysis of the reflectivity spectra allows us to investigate the role of scat tering mechanisms in the lower polariton branch compared to the middle and upper polaritons. We find that the lower polariton linewidth is smaller tha n the middle and upper polariton linewidths at all investigated temperature s from 11 to 100 K, in agreement with expectations in literature.