Exciton population effects in semiconductor luminescence

Citation
M. Kira et al., Exciton population effects in semiconductor luminescence, PHYS ST S-B, 221(1), 2000, pp. 301-305
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
221
Issue
1
Year of publication
2000
Pages
301 - 305
Database
ISI
SICI code
0370-1972(200009)221:1<301:EPEISL>2.0.ZU;2-L
Abstract
Semiconductor photoluminescence is discussed under incoherent excitation co nditions and the effects due to bound excitons are studied self-consistentl y. Due to the composite electron-hole nature of bound states, the exciton n umber operator has a dominant fermionic part which cannot be neglected when luminescence is analyzed. As a result, the emission from the Coulomb corre lated electron-here plasma and possible exciton populations is shown to be qualitatively similar under the excitation conditions investigated.