Biexcitons in semiconductor microcavities

Citation
G. Dasbach et al., Biexcitons in semiconductor microcavities, PHYS ST S-B, 221(1), 2000, pp. 319-322
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
221
Issue
1
Year of publication
2000
Pages
319 - 322
Database
ISI
SICI code
0370-1972(200009)221:1<319:BISM>2.0.ZU;2-P
Abstract
The properties of a planar semiconductor microcavity in the strong coupling regime have been studied by spectrally resolved degenerate four-wave-mixin g using fs laser pulses. In addition to the conventional cavity polaritons new spectral features, which are of biexcitonic origin can be resolved. The coupling of these states to the light field of the resonator has been stud ied by investigating their cavity detuning dependence. The observed dispers ion agrees with a bipolariton model, where the exciton to biexciton transit ion is strongly coupled to the electro-magnetic field in the cavity.