Coherent control of LO-phonon emission scattering rates in quantum wells

A systematic study of carrier-LO-phonon scattering rates in quantum wells i s presented by using a many-body perturbative formalism. Starting from the self-energy for a confined electron gas interacting with LO-phonons informa tion is obtained about the emission scattering rates. A comparison is made between the cases for three-dimensional phonons and confined phonons. Scatt ering rates are calculated as function of temperature, well-width and carri er concentration for GaAs and CdTe. Confined LO-phonons in quantum wells of fer the possibility of tuning scattering rates with the well width. The ext ension of this calculation to an asymmetric double quantum well allows to s tudy intraband and interband emission phonon rates, which are proposed to b e coherently controlled for future device applications.