Interband coherence and inversionless bistability in semiconductor lasers

Authors
Citation
Gq. Ge et Pt. Leung, Interband coherence and inversionless bistability in semiconductor lasers, PHYS ST S-B, 221(1), 2000, pp. 403-406
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
221
Issue
1
Year of publication
2000
Pages
403 - 406
Database
ISI
SICI code
0370-1972(200009)221:1<403:ICAIBI>2.0.ZU;2-9
Abstract
We study how interband coherence can be set up by an injection current and a coherent pump-field. In the absence of the pump-field, the injection curr ent is the only source to establish the interband coherence in a semiconduc tor laser system. It shows that a strongly coupled high-Q microcavity has a low lasing threshold value, which corresponds to the threshold intensity b eing unity. When an external pump-field serving as another mechanism to cre ate the interband coherence is applied, the threshold value of the injectio n current can be lowered and it vanishes for sufficiently strong field. Whe n the pump-field exceeds a threshold value, it is possible to achieve a bis tability in the inversionless region.