Kinetics of two-dimensional electrons and holes in tunneling silicon MOS structures

A recombination radiation line (S-line) of surface 2D holes and 2D nonequil ibrium electrons is observed in electroluminescence spectra of tunneling [1 00] silicon MOS (metal-oxide-semiconductor) diodes under tunneling injectio n of electrons into a self organized electron quantum well. The electron qu antum well in presence of an electrical field in the substrate forms an add itional potential barrier. The transparency of a double barrier, including the oxide barrier and the additional barrier, can be modulated by the elect rical field in the substrate. A possible realization of a tunneling ballist ic transistor (tullistor) by use of this modulation is discussed. The tulli stor can serve as a fast and effective light emitter or a laser and as a fa st photodetector. A simple theory of the tullistor is given. Kinetics of 2D electrons and holes and corresponding kinetics of electroluminescence are analyzed.