We have studied and summarized data on structure formation and dielectric c
haracteristics of Si3N4-based materials obtained by hot pressing and activa
ted sintering. We have measured the dielectric characteristics in the frequ
ency range I kHz to 10 MHz. We have established that the level of the diele
ctric characteristics of the materials is significantly affected by the con
tent of highly dispersed Si3N4 powder obtained by plasmochemical synthesis
in the original mix.