FOURIER ANALYSIS-BASED METHOD FOR HIGH-FREQUENCY PERFORMANCE CALCULATION OF HETEROJUNCTION BIPOLAR-TRANSISTOR

A method to evaluate high-frequency performance of heterojunction bipo lar transistors based on Fourier analysis of the non-stationary collec tor current response is proposed. The nonequilibrium electron transpor t and velocity overshoot effects are taken into account by ensemble Mo nte Carlo particle simulation. The influence of the emitter and collec tor capacitances on the high-frequency performance are also included i n our consideration. It is found that the conventional method for cut off frequency calculation underestimates its value. Experimental resul ts reported in the literature are compared with the results of numeric al simulation. The comparison shows high accuracy and validity of the developed method.